elektronische bauelemente BC327 / bc328 pnp plastic-encapsulate transistor 04-mar-2011 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c e k f d b g h j 2 base 3 emitter collector 1 rohs compliant product a suffix of -c specifies halogen & lead-free feature power dissipation classification of h fe (1) product-rank BC327-16 BC327-25 BC327-40 product-rank bc328-16 bc328-25 bc328-40 range 100~250 160~400 250~630 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit BC327 -50 collector to base voltage bc328 v cbo -30 v BC327 -45 collector to emitter voltage bc328 v ceo -25 v emitter to base voltage v ebo -5 v collector current - continuous i c -800 ma collector power dissipation p c 625 mw junction, storage temperature t j , t stg 150, -55~150 c to-92 1 11 1 collector 2 22 2 base 3 33 3 emitter millimeter ref. min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
elektronische bauelemente BC327 / bc328 pnp plastic-encapsulate transistor 04-mar-2011 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions BC327 -50 - - collector to base breakdown voltage bc328 v (br)cbo -30 - - v i c = -100 a, i e =0 BC327 -45 - - collector to emitter breakdown voltage bc328 v (br)ceo -25 - - v i c = -10ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -10 a, i c =0 BC327 - - -0.1 v cb = -45v, i e =0 collector cut-off current bc328 i cbo - - -0.1 a v cb = -25v, i e =0 BC327 - - -0.2 v ce = -40v, i b =0 collector cut-off current bc328 i ceo - - -0.2 a v ce = -20v, i b =0 emitter cut-off current i ebo - - -0.1 a v eb = -4v, i c =0 h fe (1) 100 - 630 v ce = -1v, i c = -100ma dc current gain h fe (2) 40 - - v ce = -1v, i c = -300ma collector-emitter saturation voltage v ce(sat) - - -0.7 v i c = -500ma, i b = -50ma base-emitter saturation voltage v be(sat) - - -1.2 v i c = -500ma, i b = -50ma base-emitter voltage v be - - -1.2 v v ce = -1v, i c = -300ma transition frequency f t 260 - - mhz v ce = -5v, i c = -10ma, f=100mhz collector output capacitance c ob - 12 - pf v cb = -10v, i e =0, f=1mhz
elektronische bauelemente BC327 / bc328 pnp plastic-encapsulate transistor 04-mar-2011 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
